Página principal > Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57Mn+ implanted GaN and AlN |
Published Articles | |
Title | Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57Mn+ implanted GaN and AlN |
Related title | Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57Mn+ implanted GaN and AlN |
Author(s) | Masenda, H (U. Witwatersrand, Johannesburg, Sch. Phys.) ; Naidoo, D (U. Witwatersrand, Johannesburg, Sch. Phys.) ; Bharuth-Ram, K (DUT, Durban ; iThemba LABS) ; Gunnlaugsson, H P (CERN ; KU Leuven, Dept. Phys. Astron.) ; Johnston, K (CERN) ; Mantovan, R (CNR-IMM Agrate Brianza, Italy) ; Mølholt, T E (CERN) ; Ncube, M (U. Witwatersrand, Johannesburg, Sch. Phys.) ; Shayestehaminzadeh, S (RWTH Aachen U.) ; Gíslason, H P (Iceland U.) ; Langouche, G (KU Leuven, Dept. Phys. Astron.) ; Ólafsson, S (Iceland U.) ; Weyer, G (Aarhus U.) |
Publication | 2016 |
Number of pages | 9 |
In: | J. Magn. Magn. Mater. 401 (2016) 1130-1138 |
DOI | 10.1016/j.jmmm.2015.11.026 |
Subject category | Other |
Accelerator/Facility, Experiment | CERN ISOLDE |
Abstract | The lattice sites, valence states, resulting magnetic behaviour and spin–lattice relaxation of Fe ions in GaN and AlN were investigated by emission Mössbauer spectroscopy following the implantation of radioactive $^{57}Mn^+$ ions at ISOLDE/CERN. Angle dependent measurements performed at room temperature on the 14.4 keV γ-rays from the 57Fe Mössbauer state (populated from the $^{57}$Mn $β ^−$ decay) reveal that the majority of the Fe ions are in the 2+ valence state nearly substituting the Ga and Al cations, and/or associated with vacancy type defects. Emission Mössbauer spectroscopy experiments conducted over a temperature range of 100–800 K show the presence of magnetically split sextets in the “wings” of the spectra for both materials. The temperature dependence of the sextets relates these spectral features to paramagnetic $Fe^{3+}$ with rather slow spin–lattice relaxation rates which follow a $T^2$ temperature dependence characteristic of a two-phonon Raman process. |