| CMS Note | |
| Report number | CMS-CR-2014-120 |
| Title | \title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools} |
| Author(s) | Bhardwaj, Ashutosh (Delhi U.) ; Messineo, Alberto (INFN, Pisa ; Pisa U.) ; Lalwani, Kavita (Delhi U.) ; Ranjan, Kirti (Delhi U.) ; Printz, Martin (Karlsruhe U., EKP) ; Ranjeet, Ranjeet (Delhi U.) ; Eber, Robert (Karlsruhe U., EKP) ; Eichhorn, Thomas (DESY) ; Peltola, Timo Hannu Tapani (Helsinki Inst. of Phys.) |
| Publication | 2014 |
| Imprint | 23 Jun 2014 |
| Number of pages | 6 |
| Presented at | International Conference on Technology and Instrumentation in Particle Physics 2014, Amsterdam, Netherlands, 2 - 6 Jun 2014 |
| Subject category | Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | CERN LHC ; CMS |
| Abstract | Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. In order to design radiation tolerant silicon sensors for the future CMS tracker upgrade it is fundamental to complement the measurement with device simulation. This will help in both the understanding of the device performance and in the optimization of the design parameters. One of the important ingredients of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this paper we will discuss the development of a radiation damage model by using commercial TCAD packages (Silvaco and Synopsys), which successfully reproduce the recent measurements like leakage current, depletion voltage, interstrip capacitance and interstrip resistance, and provides an insight into the performance of irradiated silicon strip sensors. |
| Copyright/License | Preprint: (License: CC-BY-4.0) |
Registre creat el 2014-06-30, darrera modificació el 2018-06-07
