| Article | |
| Report number | CERN-OPEN-2014-018 |
| Title | Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling |
| Author(s) | Silva, Daniel José (Porto U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Correia, Joaõ Guilherme (IST/ITN, Lisbon) ; Pereira, Lino Miguel da Costa (Leuven U.) ; Amorim, Lígia Marina (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; David-Bosne, Eric (IST/ITN, Lisbon ; Aveiro U.) ; Araújo, João Pedro (Porto U.) |
| Collaboration | EC-SLI Collaboration |
| Publication | 2013 |
| Imprint | 17 Dec 2013 |
| Number of pages | 10 |
| In: | J. Appl. Phys. 115 (2013) 023504 |
| DOI | 10.1063/1.4861142 |
| Subject category | Condensed Matter |
| Accelerator/Facility, Experiment | CERN ISOLDE ; IS453 |
| Free keywords | emission channeling |
| Abstract | We have studied the lattice location of implanted nickel in silicon, for different doping types (n, n$^{+}$ and p$^{+}$). By means of on-line emission channeling, $^{65}$Ni was identified on three different sites of the diamond lattice: ideal substitutional sites, displaced bond-center towards substitutional sites (near-BC) and displaced tetrahedral interstitial towards anti-bonding sites (near-T). We suggest that the large majority of the observed lattice sites are not related to the isolated form of Ni but rather to its trapping into vacancy-related defects produced during the implantation. While near-BC sites are prominent after annealing up to 300-500°C, near-T sites are preferred after 500-600°C anneals. Long-range diffusion starts at 600-700°C. We show evidence of Ni diffusion towards the surface and its further trapping on near-T sites at the R$_p$/2 region, providing a clear picture of the microscopic mechanism of Ni gettering by vacancy-type defects. The high thermal stability of near-BC sites in n$^{+}$-type Si, and its importance for the understanding of P-diusion gettering are also discussed. |
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記錄創建於2014-01-09，最後更新在2015-05-12
